1 2 3 1 2 3 to-25 2 -2l plastic-encapsulate transistors 2SC4003 transistor (npn) features high h fe h fe =60 to 200 low v ce(sat) v ce(sat ) =0.6v maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.2 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 400 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 400 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v collector cut-off current i cbo v cb =300v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =10v,i c =50ma 60 200 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.6 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 1 v transition frequency f t v ce =30v,i c =10ma 70 mhz classification of h fe rank d e range 60-120 100-200 to-25 2 -2l 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
0.1 1 10 100 1000 110100 100 110100 10 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1 10 100 0.2 0.4 0.6 0.8 1.0 110100 0 50 100 150 200 0 5 10 15 0 20 40 60 80 f=1mhz i e =0 / i c =0 t a =25 2SC4003 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =30v t a =25 i c f t ?? t a =100 common emitter v ce = 10v t a =25 collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? 20 10 1 30 10 1000 100 200 200 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) 200 common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
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